BLD6G22LS-50,112 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: BLD6G22LS-50,112 NXP USA Inc.
BLD6G22LS-50,112

NXP USA Inc.

RF TRANSISTOR

BLD6G22LS-50,112 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. RF TRANSISTOR. Key specifications: voltage - rated 65 V, package / case SOT-1130B, current rating (amps) 10.2A, power - output 8W.

In Stock: 30

Specifications

12 parameters
Product StatusObsolete
Transistor TypeLDMOS (Dual), Common Source
Frequency2.14GHz
Gain14dB
Voltage - Test28 V
Current Rating (Amps)10.2A
Noise Figure-
Current - Test170 mA
Power - Output8W
Voltage - Rated65 V
Package / CaseSOT-1130B
Supplier Device PackageCDFM4

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