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BLC8G27LS-140AV518

In Stock: 2,000
BLC8G27LS-140AV518 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: BLC8G27LS-140AV518 NXP USA Inc.
BLC8G27LS-140AV518

NXP USA Inc.

LDMOS RF POWER TRANSISTOR

BLC8G27LS-140AV518 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. LDMOS RF POWER TRANSISTOR.

Datasheet Request a Quote

In Stock: 2,000

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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