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BLA6G1011L-200RG112

In Stock: 40
BLA6G1011L-200RG112 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single
REF: BLA6G1011L-200RG112 NXP USA Inc.
BLA6G1011L-200RG112

NXP USA Inc.

POWER LDMOS TRANSISTOR, SOT502 (

BLA6G1011L-200RG112 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. POWER LDMOS TRANSISTOR, SOT502 (.

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In Stock: 40

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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