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BAP55L,315

In Stock: 4,786
BAP55L,315 - NXP USA Inc. - Diodes - RF
REF: BAP55L,315 NXP USA Inc.
BAP55L,315

NXP USA Inc.

RF DIODE PIN 50V 500MW DFN1006-2

BAP55L,315 is a Diodes - RF manufactured by NXP USA Inc.. RF DIODE PIN 50V 500MW DFN1006-2. Key specifications: operating temperature -65°C ~ 150°C (TJ), package / case SOD-882, current - max 100 mA.

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In Stock: 4,786

Specifications

10 parameters
Product StatusObsolete
Diode TypePIN - Single
Voltage - Peak Reverse (Max)50V
Current - Max100 mA
Capacitance @ Vr, F0.28pF @ 20V, 1MHz
Resistance @ If, F700mOhm @ 100mA, 100MHz
Power Dissipation (Max)500 mW
Operating Temperature-65°C ~ 150°C (TJ)
Package / CaseSOD-882
Supplier Device PackageDFN1006-2

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