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A3I35D025NR1

In Stock: 9,501
A3I35D025NR1 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A3I35D025NR1 NXP USA Inc.
A3I35D025NR1

NXP USA Inc.

AIRFAST RF POWER GAN TRANSISTOR

A3I35D025NR1 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER GAN TRANSISTOR. Key specifications: voltage - rated 28 V, package / case TO-270-17 Variant, Flat Leads, power - output 3.4W, frequency 3.2GHz ~ 4GHz.

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In Stock: 9,501

Specifications

12 parameters
Product StatusObsolete
Transistor TypeLDMOS
Frequency3.2GHz ~ 4GHz
Gain27.8dB
Voltage - Test-
Current Rating (Amps)-
Noise Figure-
Current - Test-
Power - Output3.4W
Voltage - Rated28 V
Package / CaseTO-270-17 Variant, Flat Leads
Supplier Device PackageTO-270WB-17

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