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A3I20X050GNR1

In Stock: 1,302
A3I20X050GNR1 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A3I20X050GNR1 NXP USA Inc.
A3I20X050GNR1

NXP USA Inc.

AIRFAST RF LDMOS WIDEBAND INTEGR

A3I20X050GNR1 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF LDMOS WIDEBAND INTEGR. Key specifications: voltage - rated 65 V, package / case OM-400G-8, current rating (amps) 10µA, power - output 6.3W.

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In Stock: 1,302

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS (Dual)
Frequency1.8GHz ~ 2.2GHz
Gain29.3dB
Voltage - Test28 V
Current Rating (Amps)10µA
Noise Figure-
Current - Test145 mA
Power - Output6.3W
Voltage - Rated65 V
Package / CaseOM-400G-8
Supplier Device PackageOM-400G-8

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