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A3G26H200W17SR3

In Stock: 4,798
A3G26H200W17SR3 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A3G26H200W17SR3 NXP USA Inc.
A3G26H200W17SR3

NXP USA Inc.

AIRFAST RF POWER GAN TRANSISTOR,

A3G26H200W17SR3 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER GAN TRANSISTOR,. Key specifications: voltage - rated 125 V, package / case NI-780S-4S2S, current - test 120 mA, power - output 34W.

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In Stock: 4,798

Specifications

12 parameters
Product StatusActive
Transistor Type-
Frequency2.496GHz ~ 2.69GHz
Gain14.2dB
Voltage - Test48 V
Current Rating (Amps)-
Noise Figure-
Current - Test120 mA
Power - Output34W
Voltage - Rated125 V
Package / CaseNI-780S-4S2S
Supplier Device PackageNI-780S-4S2S

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