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A3G26D055N-100

In Stock: 2
A3G26D055N-100 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A3G26D055N-100 NXP USA Inc.
A3G26D055N-100

NXP USA Inc.

RF REF CIRCUIT 25W 100-2800MHZ

A3G26D055N-100 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. RF REF CIRCUIT 25W 100-2800MHZ. Key specifications: voltage - rated 125 V, package / case 6-LDFN Exposed Pad, current - test 40 mA, power - output 8W.

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In Stock: 2

Specifications

12 parameters
Product StatusActive
Transistor TypeGaN
Frequency100MHz ~ 2.69GHz
Gain13.9dB
Voltage - Test48 V
Current Rating (Amps)-
Noise Figure-
Current - Test40 mA
Power - Output8W
Voltage - Rated125 V
Package / Case6-LDFN Exposed Pad
Supplier Device Package6-PDFN (7x6.5)

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