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A2V09H525-04NR6

In Stock: 3,031
A2V09H525-04NR6 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2V09H525-04NR6 NXP USA Inc.
A2V09H525-04NR6

NXP USA Inc.

AIRFAST RF LDMOS WIDEBAND INTEGR

A2V09H525-04NR6 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF LDMOS WIDEBAND INTEGR. Key specifications: voltage - rated 105 V, package / case OM-1230-4L, current rating (amps) 10µA, power - output 120W.

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In Stock: 3,031

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS
Frequency720MHz ~ 960MHz
Gain18.9dB
Voltage - Test48 V
Current Rating (Amps)10µA
Noise Figure-
Current - Test688 mA
Power - Output120W
Voltage - Rated105 V
Package / CaseOM-1230-4L
Supplier Device PackageOM-1230-4L

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