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A2T18H455W23NR6

In Stock: 6,687
A2T18H455W23NR6 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2T18H455W23NR6 NXP USA Inc.
A2T18H455W23NR6

NXP USA Inc.

AIRFAST RF POWER LDMOS TRANSISTO

A2T18H455W23NR6 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER LDMOS TRANSISTO. Key specifications: voltage - rated 65 V, package / case OM-1230-4L2S, current rating (amps) 10µA, power - output 56dBm.

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In Stock: 6,687

Specifications

12 parameters
Product StatusObsolete
Transistor TypeLDMOS
Frequency1.805GHz ~ 1.88GHz
Gain14.5dB
Voltage - Test31.5 V
Current Rating (Amps)10µA
Noise Figure-
Current - Test1.08 A
Power - Output56dBm
Voltage - Rated65 V
Package / CaseOM-1230-4L2S
Supplier Device PackageOM-1230-4L2S

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