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A2I25H060NR1

In Stock: 3,438
A2I25H060NR1 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2I25H060NR1 NXP USA Inc.
A2I25H060NR1

NXP USA Inc.

IC RF LDMOS AMP

A2I25H060NR1 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. IC RF LDMOS AMP. Key specifications: voltage - rated 65 V, package / case TO-270-17 Variant, Flat Leads, current - test 26 mA, power - output 10.5W.

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In Stock: 3,438

Specifications

12 parameters
Product StatusObsolete
Transistor TypeLDMOS (Dual)
Frequency2.59GHz
Gain26.1dB
Voltage - Test28 V
Current Rating (Amps)-
Noise Figure-
Current - Test26 mA
Power - Output10.5W
Voltage - Rated65 V
Package / CaseTO-270-17 Variant, Flat Leads
Supplier Device PackageTO-270WB-17

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