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A2I08H040GNR1

In Stock: 4,355
A2I08H040GNR1 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2I08H040GNR1 NXP USA Inc.
A2I08H040GNR1

NXP USA Inc.

IC RF LDMOS AMP

A2I08H040GNR1 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. IC RF LDMOS AMP. Key specifications: voltage - rated 65 V, package / case TO-270-15 Variant, Gull Wing, current - test 25 mA, power - output 9W.

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In Stock: 4,355

Specifications

12 parameters
Product StatusObsolete
Transistor TypeLDMOS (Dual)
Frequency920MHz
Gain30.7dB
Voltage - Test28 V
Current Rating (Amps)-
Noise Figure-
Current - Test25 mA
Power - Output9W
Voltage - Rated65 V
Package / CaseTO-270-15 Variant, Gull Wing
Supplier Device PackageTO-270WBG-15

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