RFQ List My Parts 0
Get a Quote Contact

A2G35S160-01SR3

In Stock: 223
A2G35S160-01SR3 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2G35S160-01SR3 NXP USA Inc.
A2G35S160-01SR3

NXP USA Inc.

AIRFAST RF POWER GAN TRANSISTOR

A2G35S160-01SR3 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER GAN TRANSISTOR. Key specifications: voltage - rated 125 V, package / case NI-400S-2S, current - test 190 mA, power - output 51dBm.

Datasheet Request a Quote

In Stock: 223

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS
Frequency3.4GHz ~ 3.6GHz
Gain15.7dB
Voltage - Test48 V
Current Rating (Amps)-
Noise Figure-
Current - Test190 mA
Power - Output51dBm
Voltage - Rated125 V
Package / CaseNI-400S-2S
Supplier Device PackageNI-400S-2S

Related Products

AFT09MP055NR1 - NXP USA Inc. NXP USA Inc. AFT09MP055NR1 40.22920 RFQ CPH5870-TL-E - onsemi onsemi CPH5870-TL-E 0.22000 RFQ 2SK3092-TL-E - onsemi onsemi 2SK3092-TL-E 0.64000 RFQ BF244C - Fairchild Semiconductor Fairchild Semiconductor BF244C 0.34000 RFQ 2SJ266-DL-E - onsemi onsemi 2SJ266-DL-E 0.76000 RFQ BLF242 - Rochester Electronics, LLC Rochester Electronics, LLC BLF242 56.06000 RFQ

Manufacturers in Transistors - FETs, MOSFETs - RF

Nexperia USA Inc. Toshiba Semiconductor and Storage Rochester Electronics, LLC MACOM Technology Solutions CEL NXP Semiconductors Ampleon USA Inc. Wolfspeed, Inc. Microwave Technology Inc. Amplifier Solutions Corp. WAVEPIA.,Co.Ltd

Need a Quote for A2G35S160-01SR3?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - FETs, MOSFETs - RF
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →