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A2G26H281-04SR3

In Stock: 6,077
A2G26H281-04SR3 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2G26H281-04SR3 NXP USA Inc.
A2G26H281-04SR3

NXP USA Inc.

AIRFAST RF POWER GAN TRANSISTOR

A2G26H281-04SR3 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER GAN TRANSISTOR. Key specifications: voltage - rated 125 V, package / case NI-780S-4L, current - test 150 mA, power - output 50W.

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In Stock: 6,077

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS
Frequency2.496GHz ~ 2.69GHz
Gain14.2dB
Voltage - Test48 V
Current Rating (Amps)-
Noise Figure-
Current - Test150 mA
Power - Output50W
Voltage - Rated125 V
Package / CaseNI-780S-4L
Supplier Device PackageNI-780S-4L

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