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A2G22S251-01SR3

In Stock: 2,752
A2G22S251-01SR3 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF
REF: A2G22S251-01SR3 NXP USA Inc.
A2G22S251-01SR3

NXP USA Inc.

AIRFAST RF POWER GAN TRANSISTOR

A2G22S251-01SR3 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER GAN TRANSISTOR. Key specifications: voltage - rated 125 V, package / case NI-400S-2S, current - test 200 mA, power - output 52dBm.

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In Stock: 2,752

Specifications

12 parameters
Product StatusActive
Transistor TypeLDMOS
Frequency1.805GHz ~ 2.2GHz
Gain17.7dB
Voltage - Test48 V
Current Rating (Amps)-
Noise Figure-
Current - Test200 mA
Power - Output52dBm
Voltage - Rated125 V
Package / CaseNI-400S-2S
Supplier Device PackageNI-400S-2S

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