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PBSS5612PA,115

In Stock: 99,332
PBSS5612PA,115 - NXP Semiconductors - Transistors - Bipolar (BJT) - Single
REF: PBSS5612PA,115 NXP Semiconductors
PBSS5612PA,115

NXP Semiconductors

NEXPERIA PBSS5612PA - SMALL SIGN

PBSS5612PA,115 is a Transistors - Bipolar (BJT) - Single manufactured by NXP Semiconductors. NEXPERIA PBSS5612PA - SMALL SIGN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-PowerUDFN, current - collector (ic) (max) 6 A.

Datasheet Request a Quote

In Stock: 99,332

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)12 V
Vce Saturation (Max) @ Ib, Ic300mV @ 300mA, 6A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce190 @ 2A, 2V
Power - Max2.1 W
Frequency - Transition60MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-PowerUDFN
Supplier Device Package3-HUSON (2x2)

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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