BC857BQAZ - NXP Semiconductors - Transistors - Bipolar (BJT) - Single
REF: BC857BQAZ NXP Semiconductors
BC857BQAZ

NXP Semiconductors

NEXPERIA BC857 - 45 V, 100 MA PN

BC857BQAZ is a Transistors - Bipolar (BJT) - Single manufactured by NXP Semiconductors. NEXPERIA BC857 - 45 V, 100 MA PN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-XDFN Exposed Pad, current - collector (ic) (max) 100 mA.

In Stock: 85,000

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Power - Max280 mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1010D-3

Need a Quote for BC857BQAZ?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →