NTE2367 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: NTE2367 NTE Electronics, Inc
NTE2367

NTE Electronics, Inc

T-NPN SI DIGITAL 4.7K

NTE2367 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NTE Electronics, Inc. T-NPN SI DIGITAL 4.7K. Key specifications: mounting type Through Hole, package / case TO-226-3, TO-92-3 Short Body, current - collector (ic) (max) 100 mA, power - max 300 mW.

In Stock: 1,995

Specifications

14 parameters
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250 MHz
Power - Max300 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Short Body
Supplier Device PackageTO-92S

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