NTE16003 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - RF
REF: NTE16003 NTE Electronics, Inc
NTE16003

NTE Electronics, Inc

T-NPN SI RF PO=7.5 WATTS

NTE16003 is a Transistors - Bipolar (BJT) - RF manufactured by NTE Electronics, Inc. T-NPN SI RF PO=7.5 WATTS. Key specifications: mounting type Stud Mount, operating temperature -65°C ~ 200°C (TJ), package / case TO-212MA, TO-210AB, TO-60-4, Stud, current - collector (ic) (max) 1.5A.

In Stock: 15

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Frequency - Transition500MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max11.6W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)1.5A
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeStud Mount
Package / CaseTO-212MA, TO-210AB, TO-60-4, Stud
Supplier Device PackageTO-60

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