NTE108-1 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - RF
REF: NTE108-1 NTE Electronics, Inc
NTE108-1

NTE Electronics, Inc

RF TRANS NPN 15V 600MHZ TO106

NTE108-1 is a Transistors - Bipolar (BJT) - RF manufactured by NTE Electronics, Inc. RF TRANS NPN 15V 600MHZ TO106. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-106-3 Domed, current - collector (ic) (max) 50mA.

In Stock: 3,440

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition600MHz
Noise Figure (dB Typ @ f)6dB @ 60MHz
Gain15dB
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Current - Collector (Ic) (Max)50mA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-106-3 Domed
Supplier Device PackageTO-106

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