2N6059 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Single
REF: 2N6059 NTE Electronics, Inc
2N6059

NTE Electronics, Inc

TRANS NPN DARL 100V 12A TO3

2N6059 is a Transistors - Bipolar (BJT) - Single manufactured by NTE Electronics, Inc. TRANS NPN DARL 100V 12A TO3. Key specifications: mounting type Chassis Mount, operating temperature 200°C (TJ), package / case TO-204AA, TO-3, current - collector (ic) (max) 12 A.

In Stock: 116

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 120mA, 12A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A, 3V
Power - Max150 W
Frequency - Transition4MHz
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-3

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