2N6057 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Single
REF: 2N6057 NTE Electronics, Inc
2N6057

NTE Electronics, Inc

TRANS NPN DARL 60V 12A TO3

2N6057 is a Transistors - Bipolar (BJT) - Single manufactured by NTE Electronics, Inc. TRANS NPN DARL 60V 12A TO3. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-204AA, TO-3, current - collector (ic) (max) 12 A.

In Stock: 95

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic3V @ 120mA, 12A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A, 3V
Power - Max150 W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-3

Need a Quote for 2N6057?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →