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NJG1812ME4-TE1

In Stock: 7,732
NJG1812ME4-TE1 - Nisshinbo Micro Devices Inc. - RF Switches
REF: NJG1812ME4-TE1 Nisshinbo Micro Devices Inc.
NJG1812ME4-TE1

Nisshinbo Micro Devices Inc.

HIGH POWERDPDT SWITCH GAAS MMIC

NJG1812ME4-TE1 is a RF Switches manufactured by Nisshinbo Micro Devices Inc.. HIGH POWERDPDT SWITCH GAAS MMIC. Key specifications: operating temperature -40°C ~ 105°C, voltage - supply 2.4V ~ 5V, package / case 12-XFQFN Exposed Pad, frequency range 3GHz.

Datasheet Request a Quote

In Stock: 7,732

Tiered Pricing USD
3,000+ $0.9392 —
6,000+ $0.9198 -2%
9,000+ $0.9100 -3% BEST

Specifications

16 parameters
Product StatusActive
RF TypeCDMA, GSM, LTE, UMTS
Topology-
CircuitDPDT
Frequency Range3GHz
Isolation17dB
Insertion Loss0.45dB
Test Frequency2.7GHz
P1dB-
IIP3-
FeaturesDC Blocked
Impedance50Ohm
Voltage - Supply2.4V ~ 5V
Operating Temperature-40°C ~ 105°C
Package / Case12-XFQFN Exposed Pad
Supplier Device Package12-EQFN (2x2)

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