PDTD123YT/APGVL - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTD123YT/APGVL Nexperia USA Inc.
PDTD123YT/APGVL

Nexperia USA Inc.

PDTD123YT/APGVL

PDTD123YT/APGVL is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. PDTD123YT/APGVL. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 500 mA, power - max 250 mW.

In Stock: 3,071

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

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