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PDTD113ET,215

In Stock: 12
PDTD113ET,215 - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTD113ET,215 Nexperia USA Inc.
PDTD113ET,215

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

PDTD113ET,215 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. TRANS PREBIAS NPN 250MW TO236AB. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 500 mA, power - max 250 mW.

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In Stock: 12

Specifications

14 parameters
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

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