PDTC114EMB,315 - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTC114EMB,315 Nexperia USA Inc.
PDTC114EMB,315

Nexperia USA Inc.

TRANS PREBIAS NPN 50V DFN1006B-3

PDTC114EMB,315 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. TRANS PREBIAS NPN 50V DFN1006B-3. Key specifications: mounting type Surface Mount, package / case 3-XFDFN, current - collector (ic) (max) 100 mA, power - max 250 mW.

In Stock: 2,876

Specifications

14 parameters
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition230 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package / Case3-XFDFN
Supplier Device PackageDFN1006B-3

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