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PDTA123JQCZ

In Stock: 5,000
PDTA123JQCZ - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTA123JQCZ Nexperia USA Inc.
PDTA123JQCZ

Nexperia USA Inc.

PDTA123JQC/SOT8009/DFN1412D-3

PDTA123JQCZ is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. PDTA123JQC/SOT8009/DFN1412D-3. Key specifications: mounting type Surface Mount, Wettable Flank, package / case 3-XDFN Exposed Pad, current - collector (ic) (max) 100 mA, power - max 360 mW.

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In Stock: 5,000

Specifications

14 parameters
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA
Frequency - Transition180 MHz
Power - Max360 mW
Mounting TypeSurface Mount, Wettable Flank
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1412D-3

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