Name: PDTA123JQB-QZ
Brand: Nexperia USA Inc.
SKU: PDTA123JQB-QZ
Price: 0.30 USD
Availability: InStock

REF: PDTA123JQB-QZ Nexperia USA Inc.

PDTA123JQB-QZ

Nexperia USA Inc.

PDTA123JQB-Q/SOT8015/DFN1110D-

PDTA123JQB-QZ is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. PDTA123JQB-Q/SOT8015/DFN1110D-. Key specifications: mounting type Surface Mount, Wettable Flank, package / case 3-XDFN Exposed Pad, current - collector (ic) (max) 100 mA, power - max 340 mW.

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In Stock: 9,072

Specifications

14 parameters

Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA
Frequency - Transition	180 MHz
Power - Max	340 mW
Mounting Type	Surface Mount, Wettable Flank
Package / Case	3-XDFN Exposed Pad
Supplier Device Package	DFN1110D-3