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PDTA114EQCZ

In Stock: 7,366
PDTA114EQCZ - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: PDTA114EQCZ Nexperia USA Inc.
PDTA114EQCZ

Nexperia USA Inc.

PDTA114EQC/SOT8009/DFN1412D-3

PDTA114EQCZ is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. PDTA114EQC/SOT8009/DFN1412D-3. Key specifications: mounting type Surface Mount, Wettable Flank, package / case 3-XDFN Exposed Pad, current - collector (ic) (max) 100 mA, power - max 360 mW.

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In Stock: 7,366

Specifications

14 parameters
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA
Frequency - Transition180 MHz
Power - Max360 mW
Mounting TypeSurface Mount, Wettable Flank
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1412D-3

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