NHDTA114ETR - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: NHDTA114ETR Nexperia USA Inc.
NHDTA114ETR

Nexperia USA Inc.

NHDTA114ET/SOT23/TO-236AB

NHDTA114ETR is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. NHDTA114ET/SOT23/TO-236AB. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA, power - max 250 mW.

In Stock: 2,355

Specifications

14 parameters
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA
Frequency - Transition150 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

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