JANS2N3810L/TR - Microsemi Corporation - Transistors - Bipolar (BJT) - Arrays
REF: JANS2N3810L/TR Microsemi Corporation
JANS2N3810L/TR

Microsemi Corporation

BJTS

JANS2N3810L/TR is a Transistors - Bipolar (BJT) - Arrays manufactured by Microsemi Corporation. BJTS. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 200°C (TJ), package / case TO-78-6 Metal Can.

In Stock: 5,467

Specifications

13 parameters
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Power - Max-
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78-6

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