JAN2N1016B - Microsemi Corporation - Transistors - Bipolar (BJT) - Single
REF: JAN2N1016B Microsemi Corporation
JAN2N1016B

Microsemi Corporation

TRANS NPN 100V 7.5A TO82

JAN2N1016B is a Transistors - Bipolar (BJT) - Single manufactured by Microsemi Corporation. TRANS NPN 100V 7.5A TO82. Key specifications: operating temperature -65°C ~ 150°C (TJ), supplier device package TO-82, current - collector (ic) (max) 7.5 A, power - max 150 W.

In Stock: 9,725

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)7.5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 1A, 5A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 2A, 4V
Power - Max150 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting Type-
Package / Case-
Supplier Device PackageTO-82

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