Name: APTGT75A1202G
Brand: Microsemi Corporation
SKU: APTGT75A1202G
Availability: InStock

REF: APTGT75A1202G Microsemi Corporation

APTGT75A1202G

IGBT MODULE 1200V 110A 357W SP2

APTGT75A1202G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 1200V 110A 357W SP2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP2, current - collector (ic) (max) 110 A.

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In Stock: 8,250

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	110 A
Power - Max	357 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Current - Collector Cutoff (Max)	50 µA

Input Capacitance (Cies) @ Vce	5.34 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP2
Supplier Device Package	SP2