Name: APTGT50A60T1G
Brand: Microsemi Corporation
SKU: APTGT50A60T1G
Availability: InStock

REF: APTGT50A60T1G Microsemi Corporation

APTGT50A60T1G

IGBT MODULE 600V 80A 176W SP1

APTGT50A60T1G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 600V 80A 176W SP1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case SP1, current - collector (ic) (max) 80 A.

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In Stock: 1,567

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Power - Max	176 W
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Current - Collector Cutoff (Max)	250 µA

Input Capacitance (Cies) @ Vce	3.15 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1