Name: APTGT35H120T1G
Brand: Microsemi Corporation
SKU: APTGT35H120T1G
Availability: InStock

REF: APTGT35H120T1G Microsemi Corporation

APTGT35H120T1G

IGBT MODULE 1200V 55A 208W SP1

APTGT35H120T1G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 1200V 55A 208W SP1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP1, current - collector (ic) (max) 55 A.

Datasheet Request a Quote

In Stock: 3,072

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	Trench Field Stop
Configuration	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	55 A
Power - Max	208 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Current - Collector Cutoff (Max)	250 µA

Input Capacitance (Cies) @ Vce	2.5 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1