Name: APTGT35DA120D1G
Brand: Microsemi Corporation
SKU: APTGT35DA120D1G
Availability: InStock

REF: APTGT35DA120D1G Microsemi Corporation

APTGT35DA120D1G

IGBT MODULE 1200V 55A 205W D1

APTGT35DA120D1G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 1200V 55A 205W D1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case D1, current - collector (ic) (max) 55 A.

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In Stock: 1,516

Specifications

15 parameters

Product Status	Discontinued at Digi-Key
IGBT Type	Trench Field Stop
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	55 A
Power - Max	205 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Current - Collector Cutoff (Max)	5 mA

Input Capacitance (Cies) @ Vce	2.5 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	D1
Supplier Device Package	D1