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APTGFQ25H120T2G

In Stock: 1,687
APTGFQ25H120T2G - Microsemi Corporation - Transistors - IGBTs - Modules
REF: APTGFQ25H120T2G Microsemi Corporation
APTGFQ25H120T2G

Microsemi Corporation

IGBT MODULE 1200V 40A 227W SP2

APTGFQ25H120T2G is a Transistors - IGBTs - Modules manufactured by Microsemi Corporation. IGBT MODULE 1200V 40A 227W SP2. Key specifications: mounting type Through Hole, package / case SP2, current - collector (ic) (max) 40 A, power - max 227 W.

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In Stock: 1,687

Specifications

15 parameters
Product StatusActive
IGBT TypeNPT and Fieldstop
ConfigurationFull Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)40 A
Power - Max227 W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce2.02 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseSP2
Supplier Device PackageSP2

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