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APT75GN60B2DQ3G

In Stock: 5,700
APT75GN60B2DQ3G - Microsemi Corporation - Transistors - IGBTs - Single
REF: APT75GN60B2DQ3G Microsemi Corporation
APT75GN60B2DQ3G

Microsemi Corporation

IGBT 600V 155A 536W TO264

APT75GN60B2DQ3G is a Transistors - IGBTs - Single manufactured by Microsemi Corporation. IGBT 600V 155A 536W TO264. Key specifications: mounting type Through Hole, package / case TO-264-3, TO-264AA, current - collector (ic) (max) 155 A, power - max 536 W.

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In Stock: 5,700

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)155 A
Current - Collector Pulsed (Icm)225 A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 75A
Power - Max536 W
Switching Energy2500µJ (on), 2140µJ (off)
Input TypeStandard
Gate Charge485 nC
Td (on/off) @ 25°C47ns/385ns
Test Condition400V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device Package-

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