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APT70GR65B2SCD30

In Stock: 2,301
APT70GR65B2SCD30 - Microsemi Corporation - Transistors - IGBTs - Single
REF: APT70GR65B2SCD30 Microsemi Corporation
APT70GR65B2SCD30

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

APT70GR65B2SCD30 is a Transistors - IGBTs - Single manufactured by Microsemi Corporation. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 134 A.

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In Stock: 2,301

Specifications

17 parameters
Product StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)134 A
Current - Collector Pulsed (Icm)260 A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 70A
Power - Max595 W
Switching Energy-
Input Type-
Gate Charge305 nC
Td (on/off) @ 25°C19ns/170ns
Test Condition433V, 70A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageT-MAX™ [B2]

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