Name: APT50GT120B2RDLG
Brand: Microsemi Corporation
SKU: APT50GT120B2RDLG
Price: 18.81 USD
Availability: InStock

REF: APT50GT120B2RDLG Microsemi Corporation

APT50GT120B2RDLG

Microsemi Corporation

IGBT 1200V 106A 694W TO-247

APT50GT120B2RDLG is a Transistors - IGBTs - Single manufactured by Microsemi Corporation. IGBT 1200V 106A 694W TO-247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3 Variant, current - collector (ic) (max) 106 A.

Datasheet Request a Quote

In Stock: 8

Specifications

17 parameters

Product Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	106 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Power - Max	694 W
Switching Energy	3585µJ (on), 1910µJ (off)
Input Type	Standard

Gate Charge	240 nC
Td (on/off) @ 25°C	23ns/215ns
Test Condition	800V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-