APT30GP60B2DLG

In Stock: 7,646
APT30GP60B2DLG - Microsemi Corporation - Transistors - IGBTs - Single
REF: APT30GP60B2DLG Microsemi Corporation
APT30GP60B2DLG

Microsemi Corporation

IGBT 600V 100A 463W TMAX

APT30GP60B2DLG is a Transistors - IGBTs - Single manufactured by Microsemi Corporation. IGBT 600V 100A 463W TMAX. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 100 A.

In Stock: 7,646

Specifications

17 parameters
Product StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max463 W
Switching Energy260µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge90 nC
Td (on/off) @ 25°C13ns/55ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageT-MAX™

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