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MT53E256M32D2DS-046 AAT:B TR

In Stock: 9,215
MT53E256M32D2DS-046 AAT:B TR - Micron Technology Inc. - Memory
REF: MT53E256M32D2DS-046 AAT:B TR Micron Technology Inc.
MT53E256M32D2DS-046 AAT:B TR

Micron Technology Inc.

IC DRAM 8GBIT 2.133GHZ 200WFBGA

MT53E256M32D2DS-046 AAT:B TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 8GBIT 2.133GHZ 200WFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.1V, package / case 200-WFBGA.

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In Stock: 9,215

Specifications

14 parameters
Product StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size8Gb (256M x 32)
Memory Interface-
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.1V
Operating Temperature-40°C ~ 105°C (TC)
Mounting TypeSurface Mount
Package / Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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