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MT53E256M16D1DS-046 WT:B TR

In Stock: 8,621
MT53E256M16D1DS-046 WT:B TR - Micron Technology Inc. - Memory
REF: MT53E256M16D1DS-046 WT:B TR Micron Technology Inc.
MT53E256M16D1DS-046 WT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

MT53E256M16D1DS-046 WT:B TR is a Memory manufactured by Micron Technology Inc.. IC DRAM LPDDR4 WFBGA. Key specifications: operating temperature -30°C ~ 85°C (TC), voltage - supply 1.1V, memory size 4Gb (256M x 16).

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In Stock: 8,621

Specifications

14 parameters
Product StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size4Gb (256M x 16)
Memory Interface-
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.1V
Operating Temperature-30°C ~ 85°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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