RFQ List My Parts 0
Get a Quote Contact

MT53D512M64D4NY-046 XT ES:E TR

In Stock: 3,621
MT53D512M64D4NY-046 XT ES:E TR - Micron Technology Inc. - Memory
REF: MT53D512M64D4NY-046 XT ES:E TR Micron Technology Inc.
MT53D512M64D4NY-046 XT ES:E TR

Micron Technology Inc.

IC DRAM 32GBIT 2133MHZ FBGA

MT53D512M64D4NY-046 XT ES:E TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 32GBIT 2133MHZ FBGA. Key specifications: operating temperature -30°C ~ 105°C (TC), voltage - supply 1.1V, memory size 32Gb (512M x 64).

Request a Quote

In Stock: 3,621

Specifications

14 parameters
Product StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size32Gb (512M x 64)
Memory Interface-
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.1V
Operating Temperature-30°C ~ 105°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package-

Related Products

MT25QL512ABB8E12-0SIT - Micron Technology Inc. Micron Technology Inc. MT25QL512ABB8E12-0SIT 8.22000 RFQ JS28F128J3F75B TR - Micron Technology Inc. Micron Technology Inc. JS28F128J3F75B TR 5.04061 RFQ S29GL01GP12TFI023 - Flip Electronics Flip Electronics S29GL01GP12TFI023 15.27000 RFQ HN27C256AG15 - Renesas Electronics America Inc Renesas Electronics America Inc HN27C256AG15 9.69000 RFQ CY7C1370S-200AXCKJ - Rochester Electronics, LLC Rochester Electronics, LLC CY7C1370S-200AXCKJ 27.20000 RFQ S29GL128P11TFI020 - Infineon Technologies Infineon Technologies S29GL128P11TFI020 7.08000 RFQ

Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

Need a Quote for MT53D512M64D4NY-046 XT ES:E TR?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Memory
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →