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MT53D256M64D4NY-046 XT ES:B TR

In Stock: 4,442
MT53D256M64D4NY-046 XT ES:B TR - Micron Technology Inc. - Memory
REF: MT53D256M64D4NY-046 XT ES:B TR Micron Technology Inc.
MT53D256M64D4NY-046 XT ES:B TR

Micron Technology Inc.

IC DRAM 16GBIT 2133MHZ FBGA

MT53D256M64D4NY-046 XT ES:B TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 16GBIT 2133MHZ FBGA. Key specifications: operating temperature -30°C ~ 105°C (TC), voltage - supply 1.1V, memory size 16Gb (256M x 64).

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In Stock: 4,442

Specifications

14 parameters
Product StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size16Gb (256M x 64)
Memory Interface-
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.1V
Operating Temperature-30°C ~ 105°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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