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MT53B512M64D4NZ-062 WT ES:D TR

In Stock: 5,400
MT53B512M64D4NZ-062 WT ES:D TR - Micron Technology Inc. - Memory
REF: MT53B512M64D4NZ-062 WT ES:D TR Micron Technology Inc.
MT53B512M64D4NZ-062 WT ES:D TR

Micron Technology Inc.

IC DRAM 32GBIT 1600MHZ FBGA

MT53B512M64D4NZ-062 WT ES:D TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 32GBIT 1600MHZ FBGA. Key specifications: operating temperature -30°C ~ 85°C (TC), voltage - supply 1.1V, memory size 32Gb (512M x 64).

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In Stock: 5,400

Specifications

14 parameters
Product StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size32Gb (512M x 64)
Memory Interface-
Clock Frequency1.6 GHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.1V
Operating Temperature-30°C ~ 85°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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