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MT47H512M4THN-25E:M

In Stock: 7,432
MT47H512M4THN-25E:M - Micron Technology Inc. - Memory
REF: MT47H512M4THN-25E:M Micron Technology Inc.
MT47H512M4THN-25E:M

Micron Technology Inc.

IC DRAM 2GBIT PARALLEL 63FBGA

MT47H512M4THN-25E:M is a Memory manufactured by Micron Technology Inc.. IC DRAM 2GBIT PARALLEL 63FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 63-TFBGA.

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In Stock: 7,432

Specifications

14 parameters
Product StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR2
Memory Size2Gb (512M x 4)
Memory InterfaceParallel
Clock Frequency400 MHz
Write Cycle Time - Word, Page15ns
Access Time400 ps
Voltage - Supply1.7V ~ 1.9V
Operating Temperature0°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case63-TFBGA
Supplier Device Package63-FBGA (8x10)

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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