IC DRAM 4GBIT PARALLEL DIE
MT41K512M8V00HWC1 is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PARALLEL DIE. Key specifications: operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, memory size 4Gb (512M x 8).
In Stock: 7,179
| Product Status | Active |
|---|---|
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
|---|---|
| Access Time | - |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
Micron Technology Inc.
MT25QL512ABB8E12-0SIT
8.22000
RFQ
Micron Technology Inc.
JS28F128J3F75B TR
5.04061
RFQ
Flip Electronics
S29GL01GP12TFI023
15.27000
RFQ
Renesas Electronics America Inc
HN27C256AG15
9.69000
RFQ
Rochester Electronics, LLC
CY7C1370S-200AXCKJ
27.20000
RFQ
Infineon Technologies
S29GL128P11TFI020
7.08000
RFQ
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