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MT29F6T08ETHBBM5-3R:B

In Stock: 3,006
MT29F6T08ETHBBM5-3R:B - Micron Technology Inc. - Memory
REF: MT29F6T08ETHBBM5-3R:B Micron Technology Inc.
MT29F6T08ETHBBM5-3R:B

Micron Technology Inc.

IC FLASH 6TB PARALLEL 333MHZ

MT29F6T08ETHBBM5-3R:B is a Memory manufactured by Micron Technology Inc.. IC FLASH 6TB PARALLEL 333MHZ. Key specifications: operating temperature 0°C ~ 70°C (TA), voltage - supply 2.5V ~ 3.6V, memory size 6Tb (768G x 8).

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In Stock: 3,006

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size6Tb (768G x 8)
Memory InterfaceParallel
Clock Frequency333 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.5V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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