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MT29F512G08EMCBBJ5-10ES:B TR

In Stock: 3,968
MT29F512G08EMCBBJ5-10ES:B TR - Micron Technology Inc. - Memory
REF: MT29F512G08EMCBBJ5-10ES:B TR Micron Technology Inc.
MT29F512G08EMCBBJ5-10ES:B TR

Micron Technology Inc.

IC FLASH 512GBIT PARALLEL 100MHZ

MT29F512G08EMCBBJ5-10ES:B TR is a Memory manufactured by Micron Technology Inc.. IC FLASH 512GBIT PARALLEL 100MHZ. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.7V ~ 3.6V, supplier device package 132-TBGA (12x18).

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In Stock: 3,968

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (TLC)
Memory Size512Gb (64G x 8)
Memory InterfaceParallel
Clock Frequency100 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case-
Supplier Device Package132-TBGA (12x18)

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Intel ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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